We analyzed the transient response of organic transistors by means of the deep-level transient spectroscopy technique. We showed how the current transient can be related to a mobility transient from which we estimated two different kinds of activation energies as well as information to the density of states.

Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique

Emilia Benvenuti;Marco Natali;Stefano Toffanin;Michele Muccini;
2016

Abstract

We analyzed the transient response of organic transistors by means of the deep-level transient spectroscopy technique. We showed how the current transient can be related to a mobility transient from which we estimated two different kinds of activation energies as well as information to the density of states.
2016
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Characterization techniques
current transients
deep-level transient spectroscopy (DLTS)
mobility transients
organic Semiconductors
organic thin-film transistor
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/321035
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