In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) powermodule (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTsPMhas been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted disturbances, generated by the PM and measured in the dc link, have been compared with the simulation results verifying the proposed model.
High-Frequency Experimental Characterization and Modeling of Six Pack IGBTs Power Modules
D Di Cara;G Marsala;A Pecoraro;A Ragusa;G Tinè
2016
Abstract
In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) powermodule (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTsPMhas been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted disturbances, generated by the PM and measured in the dc link, have been compared with the simulation results verifying the proposed model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
