One year after the publication of the seminal paper on monolayer 3X3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial sqrt3Xsqrt3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study that multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200 °C), while three-dimensional growth of silicon crystallites takes place at higher temperatures, (~300 °C). This transition to bulk-like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.

Multilayer silicene: clear evidence

Paola De Padova;Amanda Generosi;Barbara Paci;Carlo Ottaviani;Claudio Quaresima;Bruno Olivieri;
2016

Abstract

One year after the publication of the seminal paper on monolayer 3X3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial sqrt3Xsqrt3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study that multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200 °C), while three-dimensional growth of silicon crystallites takes place at higher temperatures, (~300 °C). This transition to bulk-like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.
2016
Istituto di Scienze dell'Atmosfera e del Clima - ISAC
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
multilayer silicene
surface x-ray diffraction
LEED
AES
STM
Raman spectroscopy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/323447
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