Abstract We performed constant voltage stresses with different bias conditions on all-organic complementary inverters. We found a 20% maximum variation of DC inverter parameters after a 10<sup>4</sup>-s stress. However, the largest stress-induced degradation was found in the delay times, which increased by a factor as high as 7. This is mainly due to the threshold voltage variation of the p-type thin-film-transistor and the mobility reduction of the n-type thin-film transistors, which both decrease the saturation drain current.
Reliability study of organic complementary logic inverters using constant voltage stress
Muccini M;
2015
Abstract
Abstract We performed constant voltage stresses with different bias conditions on all-organic complementary inverters. We found a 20% maximum variation of DC inverter parameters after a 104-s stress. However, the largest stress-induced degradation was found in the delay times, which increased by a factor as high as 7. This is mainly due to the threshold voltage variation of the p-type thin-film-transistor and the mobility reduction of the n-type thin-film transistors, which both decrease the saturation drain current.File in questo prodotto:
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