Polycrystalline 3C(,8)-SiC thin films have been deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC].

Characterization of cubic 3C(beta)-SiC samples for pressure sensors and micro-electromechanical system (MEMS) applications is reported in this paper.

Characterization of polycrystalline 3C(beta)-SiC thin films for MEMS and pressure sensors application

Cocuzza M;
2004

Abstract

Characterization of cubic 3C(beta)-SiC samples for pressure sensors and micro-electromechanical system (MEMS) applications is reported in this paper.
2004
0-7803-8535-7
Polycrystalline 3C(,8)-SiC thin films have been deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC].
SiC
MEMS
Pressure sensor
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/324575
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