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Polycrystalline 3C(,8)-SiC thin films have been deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC].

Characterization of cubic 3C(beta)-SiC samples for pressure sensors and micro-electromechanical system (MEMS) applications is reported in this paper.

Characterization of polycrystalline 3C(beta)-SiC thin films for MEMS and pressure sensors application

Cocuzza M;
2004

Abstract

Characterization of cubic 3C(beta)-SiC samples for pressure sensors and micro-electromechanical system (MEMS) applications is reported in this paper.
2004
Inglese
ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes, 2004
25
28
4
0-7803-8535-7
http://porto.polito.it/2372006/
Sì, ma tipo non specificato
17-21/10/2004
Smolenics Castle; Slovakia
Polycrystalline 3C(,8)-SiC thin films have been deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC].
SiC
MEMS
Pressure sensor
2-s2.0-28844443520
WOS:000228828900006
1
none
Cavallini, A; Rossi, M; Cocuzza, M; Ricciardi, C
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/324575
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