The effective control of magnetohydrodynamic instabilities in fusion experiments by means of actively controlled coils calls for challenging dynamic requirements to the relevant power supply (PS) systems. The first part of this paper gives an overview on typical requirements and technological solutions adopted in some present fusion experiments. Then, the advantages of SiC devices with respect to the Si ones are described in this paper, including lower switching losses, higher switching speed, higher operating junction temperature, and higher voltage capability. As an application example, this paper reports on the case of the PS system for resistive wall mode control in the JT-60SA satellite tokamak, where analyses showed the difficulty of satisfying the demanding requirements in terms of high current bandwidth (3 kHz) and short latency (<50 ?s) with a simple H-bridge topology adopting standard IGBT. On the contrary, the use of Si-SiC IGBT with the same topology can allow meeting the specifications, as demonstrated by the development and test of such a power amplifier, rated for 300 Apk and 240 V.

Power Amplifiers Based on SiC Technology for MHD Mode Control in Fusion Experiments

Gaio E;
2016

Abstract

The effective control of magnetohydrodynamic instabilities in fusion experiments by means of actively controlled coils calls for challenging dynamic requirements to the relevant power supply (PS) systems. The first part of this paper gives an overview on typical requirements and technological solutions adopted in some present fusion experiments. Then, the advantages of SiC devices with respect to the Si ones are described in this paper, including lower switching losses, higher switching speed, higher operating junction temperature, and higher voltage capability. As an application example, this paper reports on the case of the PS system for resistive wall mode control in the JT-60SA satellite tokamak, where analyses showed the difficulty of satisfying the demanding requirements in terms of high current bandwidth (3 kHz) and short latency (<50 ?s) with a simple H-bridge topology adopting standard IGBT. On the contrary, the use of Si-SiC IGBT with the same topology can allow meeting the specifications, as demonstrated by the development and test of such a power amplifier, rated for 300 Apk and 240 V.
2016
Istituto gas ionizzati - IGI - Sede Padova
Hybrid Si-SiC IGBT
magnetohydrodynamic (MHD) mode control
power supply (PS)
silicon carbide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/324832
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