An unusual liquid organoindium precursor for MOVPE was sinthetised, purified and tested for homo- and hetero-epitaxial growth of InP. The good quality of the obtained epilayers was tested by Hall and PL measurements. The measured growth rate is low (0.2 mu m/h), and constant in a wide temperature range (580 divided by 680 degrees C). This makes dimethyl indium pyrazole a good candidate for the growth of In-based MQW structures. InP nanostructures on a GaAs substrate were also grown using the same precursor.
InP grown by low-pressure MOVPE using dimethylindium pyrazole
Guerriero P;
1996
Abstract
An unusual liquid organoindium precursor for MOVPE was sinthetised, purified and tested for homo- and hetero-epitaxial growth of InP. The good quality of the obtained epilayers was tested by Hall and PL measurements. The measured growth rate is low (0.2 mu m/h), and constant in a wide temperature range (580 divided by 680 degrees C). This makes dimethyl indium pyrazole a good candidate for the growth of In-based MQW structures. InP nanostructures on a GaAs substrate were also grown using the same precursor.File in questo prodotto:
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