Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temeprature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at ~800 K, at which temperature, the centroids of the core level spectra start to move to a lower binding energy, and their widths start to increase more quickly.
Photoemission of Ge(110) at room and high temperature
C Cepek;
1998
Abstract
Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temeprature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at ~800 K, at which temperature, the centroids of the core level spectra start to move to a lower binding energy, and their widths start to increase more quickly.File in questo prodotto:
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