The study describes a targeted synthesis of a new dielectric material for an emerging ULTCC-I technology (ultralow temperature co-fired ceramic technology), which resulted in discovery of a PbTeV2O8 phase. A structural solution from powder data showed that the phase belongs to no known crystallographic family and is formed from Vs+ ions in an unusual square-pyramidal coordination. It is characterized by very low processing temperatures that enable integration with Al electrodes and, potentially, even with polymer and paper substrates. Dielectric properties in combination with processing parameters qualify the PbTeV2O8 phase for integration, as midpermittivity capacitors, in ULTCC-I modules.
Oxide Crystal Structure with Square-Pyramidally Coordinated Vanadium for Integrated Electronics Manufactured at Ultralow Processing Temperatures
Altomare A;Moliterni A
2017
Abstract
The study describes a targeted synthesis of a new dielectric material for an emerging ULTCC-I technology (ultralow temperature co-fired ceramic technology), which resulted in discovery of a PbTeV2O8 phase. A structural solution from powder data showed that the phase belongs to no known crystallographic family and is formed from Vs+ ions in an unusual square-pyramidal coordination. It is characterized by very low processing temperatures that enable integration with Al electrodes and, potentially, even with polymer and paper substrates. Dielectric properties in combination with processing parameters qualify the PbTeV2O8 phase for integration, as midpermittivity capacitors, in ULTCC-I modules.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
