Weak localization was observed in a black phosphorus field-effect transistor 65 nm thick. The weak localization behavior was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1 T, from which characteristic scattering lengths could be inferred. The temperature dependence of the phase coherence length L-phi was investigated, and above 1 K, it was found to decrease weaker than the L-phi proportional to T-1/2 dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes.

Dephasing in strongly anisotropic black phosphorus

Telesio F;Caporali M;Ienco A;Peruzzini M;Heun S
2016

Abstract

Weak localization was observed in a black phosphorus field-effect transistor 65 nm thick. The weak localization behavior was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1 T, from which characteristic scattering lengths could be inferred. The temperature dependence of the phase coherence length L-phi was investigated, and above 1 K, it was found to decrease weaker than the L-phi proportional to T-1/2 dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes.
2016
Istituto di Chimica dei Composti OrganoMetallici - ICCOM -
Istituto Nanoscienze - NANO
black phosphorus
field-effect transistor
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/326350
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