Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.
In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime
Cattarin S;
1998
Abstract
Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_217595-doc_50766.pdf
non disponibili
Descrizione: In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime
Dimensione
509.74 kB
Formato
Adobe PDF
|
509.74 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
