In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

2016

Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.
2016
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/326456
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact