Porous silicon (PS) layer was formed by electrochemical anodization on a p-type Si surface. Thereafter, n-type TiO2-x thin film was deposited onto the PS surface by electron-beam evaporation. Pt catalytic layer and Au electrical contacts for further measurements were deposited onto the PS/TiO2-x structure by ion-beam sputtering. Current-voltage characteristic, sensitivity to different concentration of hydrogen and resistance change of obtained structures versus time were examined. Results of measurements have shown that the current-voltage characteristics of structures are similar to that of diode. High sensitivity to hydrogen of obtained structures was also detected. Note that all measurements were carried out at room temperature. © 2007 Elsevier B.V. All rights reserved.

Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure

2007

Abstract

Porous silicon (PS) layer was formed by electrochemical anodization on a p-type Si surface. Thereafter, n-type TiO2-x thin film was deposited onto the PS surface by electron-beam evaporation. Pt catalytic layer and Au electrical contacts for further measurements were deposited onto the PS/TiO2-x structure by ion-beam sputtering. Current-voltage characteristic, sensitivity to different concentration of hydrogen and resistance change of obtained structures versus time were examined. Results of measurements have shown that the current-voltage characteristics of structures are similar to that of diode. High sensitivity to hydrogen of obtained structures was also detected. Note that all measurements were carried out at room temperature. © 2007 Elsevier B.V. All rights reserved.
2007
Hydrogen gas sensor
Metal oxide layer
Porous silicon
Room temperature
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/329947
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