The semiconductor photoanodes made of thin film titanium oxide were prepared by anodization of titanium plates in hydrofluoric acid solution at direct voltage at room temperature. The influence of the change of titanium oxide film growth conditions (concentration of hydrofluoric acid, voltage, duration of anodization process) and subsequent heat treatment of films on a photocurrent and current-voltage characteristics of photoelectrodes were investigated. The influence of the electrolyte concentrations change on photoelectrochemical behaviour of thin film titanium oxide photoanodes was investigated.
Manufacture and investigation of titanium oxide photoanodes for water photoelectrolysis
Galstyan VE
2006
Abstract
The semiconductor photoanodes made of thin film titanium oxide were prepared by anodization of titanium plates in hydrofluoric acid solution at direct voltage at room temperature. The influence of the change of titanium oxide film growth conditions (concentration of hydrofluoric acid, voltage, duration of anodization process) and subsequent heat treatment of films on a photocurrent and current-voltage characteristics of photoelectrodes were investigated. The influence of the electrolyte concentrations change on photoelectrochemical behaviour of thin film titanium oxide photoanodes was investigated.File in questo prodotto:
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