The first part of this chapter describes the main processes that influence the optical and electrical behavior of the devices below and above the optical turn-on, along with their theoretical framework and a brief review of the literature on the topic. In the second part, we present a comprehensive analysis of diffusion-related degradation processes, based on previous literature reports. Finally, we present a discussion on the possible physical models able to explain experimental data on degradation of GaN-based optoelectronic devices.

Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

Alberto Tibaldi;Michele Goano;Francesco Bertazzi;
2018

Abstract

The first part of this chapter describes the main processes that influence the optical and electrical behavior of the devices below and above the optical turn-on, along with their theoretical framework and a brief review of the literature on the topic. In the second part, we present a comprehensive analysis of diffusion-related degradation processes, based on previous literature reports. Finally, we present a discussion on the possible physical models able to explain experimental data on degradation of GaN-based optoelectronic devices.
2018
978-0-08-101942-9
LED
GaN
nitrides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/331401
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