The first part of this chapter describes the main processes that influence the optical and electrical behavior of the devices below and above the optical turn-on, along with their theoretical framework and a brief review of the literature on the topic. In the second part, we present a comprehensive analysis of diffusion-related degradation processes, based on previous literature reports. Finally, we present a discussion on the possible physical models able to explain experimental data on degradation of GaN-based optoelectronic devices.
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
Alberto Tibaldi;Michele Goano;Francesco Bertazzi;
2018
Abstract
The first part of this chapter describes the main processes that influence the optical and electrical behavior of the devices below and above the optical turn-on, along with their theoretical framework and a brief review of the literature on the topic. In the second part, we present a comprehensive analysis of diffusion-related degradation processes, based on previous literature reports. Finally, we present a discussion on the possible physical models able to explain experimental data on degradation of GaN-based optoelectronic devices.File in questo prodotto:
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