Electrical detection of DNA using a SiC Nanowire Field Effect Transistor (NWFET) is studied. The NWFETs are fabricated and then functionalized with DNA molecules. Between each step of the functionalization process, I-V characteristic measurements are performed. Comparative and simultaneous measurements are carried out on two SiC NWFETs: one is the sensor and the second one is used as a reference. Some interesting properties of the sensor are studied for the first time such as selectivity, reproducibility, reversibility and stability. This original study opens the way to future developments of SiC nanowire based sensors.

DNA detection using SiC nanowire based transistor

Attolini G
2016

Abstract

Electrical detection of DNA using a SiC Nanowire Field Effect Transistor (NWFET) is studied. The NWFETs are fabricated and then functionalized with DNA molecules. Between each step of the functionalization process, I-V characteristic measurements are performed. Comparative and simultaneous measurements are carried out on two SiC NWFETs: one is the sensor and the second one is used as a reference. Some interesting properties of the sensor are studied for the first time such as selectivity, reproducibility, reversibility and stability. This original study opens the way to future developments of SiC nanowire based sensors.
2016
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
9783035710427
DNA; Nanowire; NWFET; Sensor; SiC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/332358
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