A procedure for fabricating all refractory superconducting tunnel junctions with a semiconducting barrier has been developed. The process is based on the deposition of a four-layer Nb-Al-CdS-Nb structure without breaking the vacuum. The photoconducting properties of the barrier produce a light-sensitive behavior of the junctions. Preliminary measurements have shown the occurrence of light induced quasiparticle tunneling. © 1996 American Institute of Physics.
All refractory light-sensitive superconductive junctions
Granata C;
1996
Abstract
A procedure for fabricating all refractory superconducting tunnel junctions with a semiconducting barrier has been developed. The process is based on the deposition of a four-layer Nb-Al-CdS-Nb structure without breaking the vacuum. The photoconducting properties of the barrier produce a light-sensitive behavior of the junctions. Preliminary measurements have shown the occurrence of light induced quasiparticle tunneling. © 1996 American Institute of Physics.File in questo prodotto:
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