A procedure for fabricating all refractory superconducting tunnel junctions with a photoconducting barrier is reported. The process is based on the deposition of a multilayer structure without breaking the vacuum. Both symmetrical Nb/Al-CdSCAlCy-Al/Nb and asymmetrical Nb/Al-CdSCAlO-4/Nb junctions have been fabricated. The photoconducting behavior of the CdS film gives the possibility of modifying the tunnel barrier transparency during the experiments by a suitable optical input. Results of experimental investigations performed on samples having a barrier thickness in the range 7-50 nm are discussed. ©Société Italiana di Fisica.
All refractory light-sensitive superconductive tunnel junctions
Granata C;
1997
Abstract
A procedure for fabricating all refractory superconducting tunnel junctions with a photoconducting barrier is reported. The process is based on the deposition of a multilayer structure without breaking the vacuum. Both symmetrical Nb/Al-CdSCAlCy-Al/Nb and asymmetrical Nb/Al-CdSCAlO-4/Nb junctions have been fabricated. The photoconducting behavior of the CdS film gives the possibility of modifying the tunnel barrier transparency during the experiments by a suitable optical input. Results of experimental investigations performed on samples having a barrier thickness in the range 7-50 nm are discussed. ©Société Italiana di Fisica.File in questo prodotto:
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