Experimental investigations on the proximity effect in Nb/Al bilayers by using Nb/AlxOy/Nb/Al/AlxOy/Nb structures with different Al thickness are reported. Three-terminal stacked devices were fabricated by using a new process based on a whole-wafer deposition of the multilayer without any vacuum breaking in order to ensure a high control of the interfaces. The quasiparticle density of states at both sides of the bilayer and the effective interface coupling parameters were obtained by a deconvolution of the I-V data. They ...

Double stacked superconducting junctions for investigating the proximity effect in Nb/Al bilayers

Granata C;Esposito E;
2002

Abstract

Experimental investigations on the proximity effect in Nb/Al bilayers by using Nb/AlxOy/Nb/Al/AlxOy/Nb structures with different Al thickness are reported. Three-terminal stacked devices were fabricated by using a new process based on a whole-wafer deposition of the multilayer without any vacuum breaking in order to ensure a high control of the interfaces. The quasiparticle density of states at both sides of the bilayer and the effective interface coupling parameters were obtained by a deconvolution of the I-V data. They ...
2002
Inglese
372-376
351
354
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036682764&partnerID=q2rCbXpz
Sì, ma tipo non specificato
Density of states
Proximity effect
Three-terminal devices
9
info:eu-repo/semantics/article
262
Parlato, L; Pepe, Gp; Peluso, G; Scaldaferri, R; Granata, C; Esposito, E; Russo, M; Booth, N; Barone, A
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/334913
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