We have fabricated and analyzed bicrystal grain boundary superconducting quantum interference devices made by Fe(Se,Te) superconductors, grown on [001] tilt SrTiO3 bicrystal substrates. We have realized several devices using the so-called hole-type geometry, with different loop inductances and different junction widths. Modulations of the voltage under an external applied magnetic field have been observed for three samples. Voltage amplitudes of the order of few microvolt have been measured. The maximum magnetic flux-to-voltage transfer parameter value that we have observed has been ${V}_{{\rm{\Phi }}}=9.4\,\mu {\rm{V}}/{{\rm{\Phi }}}_{0}$. The experimental data are analyzed in the famework of existing theoretical models.
Fe(Se,Te) superconducting quantum interference devices
Sarnelli E;Nappi C;Leveratto A;Bellingeri E;Braccini V;Ferdeghini C
2017
Abstract
We have fabricated and analyzed bicrystal grain boundary superconducting quantum interference devices made by Fe(Se,Te) superconductors, grown on [001] tilt SrTiO3 bicrystal substrates. We have realized several devices using the so-called hole-type geometry, with different loop inductances and different junction widths. Modulations of the voltage under an external applied magnetic field have been observed for three samples. Voltage amplitudes of the order of few microvolt have been measured. The maximum magnetic flux-to-voltage transfer parameter value that we have observed has been ${V}_{{\rm{\Phi }}}=9.4\,\mu {\rm{V}}/{{\rm{\Phi }}}_{0}$. The experimental data are analyzed in the famework of existing theoretical models.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
