The interaction of 4H- and 6H-SiC (0001)(Si) surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200degreesC) and high temperature (750degreesC) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200degreesC is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a root3xroot3R30degrees reconstruction, ideal for GaN heteroepitaxy.
A Study of the Temperature-Dependent Interaction of 4H-SiC and 6H-SiC Surfaces with Atomic Hydrogen
M Losurdo;G Bruno;
2004
Abstract
The interaction of 4H- and 6H-SiC (0001)(Si) surfaces with atomic hydrogen produced by a remote rf plasma source is investigated. The impact of the low temperature (200degreesC) and high temperature (750degreesC) interaction on chemical and morphological surface modifications is addressed with in situ real time monitoring using spectroscopic ellipsometry. It is found that the interaction of SiC surfaces with atomic hydrogen at 200degreesC is suitable for producing clean, atomically ordered, smooth and terraced surfaces with a stoichiometry associated with a root3xroot3R30degrees reconstruction, ideal for GaN heteroepitaxy.File in questo prodotto:
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