Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be art effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1 - 100) surfaces for Ga beam equivalent pressures in the range of 8.96X 10(-8)-1.86x 10(-7) Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 degrees C.
Kinetics of gallium adlayer adsorption/desorption on polar and non-polar GaN surfaces
Losurdo;
2007
Abstract
Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be art effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1 - 100) surfaces for Ga beam equivalent pressures in the range of 8.96X 10(-8)-1.86x 10(-7) Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 degrees C.File in questo prodotto:
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