We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics. (c) 2007 Elsevier B.V. All rights reserved.

Room temperature deposition of magnetite thin films on organic substrate

Bergenti I;Cavallini M;Murgia M;Riminucci A;Ruani G;Dediu V
2007

Abstract

We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics. (c) 2007 Elsevier B.V. All rights reserved.
2007
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Inglese
316
2
410
412
3
Sì, ma tipo non specificato
organic semiconductor
thin film
magnetite
pulsed electron deposition
magnetic oxide
6
info:eu-repo/semantics/article
262
Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/336033
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