Technological procedures able to produce high quality electrodes from magnetic oxides in vertical organic-inorganic hybrid devices is a challenging task in the field of organic spintronics. Thin films of magnetite (Fe(3)O(4)) have been successfully grown directly on top of organic semiconductor layers, tris(8-hydroxyquinoline)aluminium(III) (Alq(3)), by pulsed-electron ablation technique. The films show ferromagnetic behavior and good structural quality, properties detected by magneto-optical Kerr effect, superconductor quantum interference device, micro-Raman spectroscopy, and Atomic Force Microscopy. The ferromagnetic behavior persists even for 10 nm thick films. Charge injection at magnetite-organic interface has been finally demonstrated by detecting electroluminescence from Alq(3).

Direct deposition of magnetite thin films on organic semiconductors

I Bergenti;M Cavallini;A Riminucci;G Ruani;V Dediu;
2008

Abstract

Technological procedures able to produce high quality electrodes from magnetic oxides in vertical organic-inorganic hybrid devices is a challenging task in the field of organic spintronics. Thin films of magnetite (Fe(3)O(4)) have been successfully grown directly on top of organic semiconductor layers, tris(8-hydroxyquinoline)aluminium(III) (Alq(3)), by pulsed-electron ablation technique. The films show ferromagnetic behavior and good structural quality, properties detected by magneto-optical Kerr effect, superconductor quantum interference device, micro-Raman spectroscopy, and Atomic Force Microscopy. The ferromagnetic behavior persists even for 10 nm thick films. Charge injection at magnetite-organic interface has been finally demonstrated by detecting electroluminescence from Alq(3).
2008
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
ROOM-TEMPERATURE
FE3O4 FILMS
DEVICES
RAMAN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/33881
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