Beam monitoring in synchrotron radiation or free electron laser facilities is extremely important for calibration and diagnostic issues. Here we propose an in-situ detector showing fast response and homogeneity for both diagnostics and calibration purposes. The devices are based on In0.75Ga0.25As/In0.75Al0.25As QWs, which offer several advantages due to their direct, low-energy band gap and high electron mobility at room temperature. A pixelation structure with 4 quadrants was developed on the back surface of the device, in order to fit commercially available readout chips. The QW devices have been tested with collimated monochromatic X-ray beams from synchrotron radiation. A rise in the current noise with positive bias was observed, which could be due to deep traps for hole carriers. Therefore, an optimized negative bias was chosen to minimize dark currents and noise. A decrease in charge collection efficiency was experienced as the beam penetrates into deeper layers, where a dislocation network is present. The prototype samples showed that individual currents obtained from each quadrant allow the position of the beam to be monitored for all the utilized energies. These detectors have a potential to estimate the position of the beam with a precision of about 10 µm.

Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells

Cucini R;Biasiol G
2015

Abstract

Beam monitoring in synchrotron radiation or free electron laser facilities is extremely important for calibration and diagnostic issues. Here we propose an in-situ detector showing fast response and homogeneity for both diagnostics and calibration purposes. The devices are based on In0.75Ga0.25As/In0.75Al0.25As QWs, which offer several advantages due to their direct, low-energy band gap and high electron mobility at room temperature. A pixelation structure with 4 quadrants was developed on the back surface of the device, in order to fit commercially available readout chips. The QW devices have been tested with collimated monochromatic X-ray beams from synchrotron radiation. A rise in the current noise with positive bias was observed, which could be due to deep traps for hole carriers. Therefore, an optimized negative bias was chosen to minimize dark currents and noise. A decrease in charge collection efficiency was experienced as the beam penetrates into deeper layers, where a dislocation network is present. The prototype samples showed that individual currents obtained from each quadrant allow the position of the beam to be monitored for all the utilized energies. These detectors have a potential to estimate the position of the beam with a precision of about 10 µm.
2015
Istituto Officina dei Materiali - IOM -
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B3. Heterojunction semiconductor devices
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/341361
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