We investigate the evolution of both the occupied and unoccupied electronic structure in representative compounds of the infinitely adaptive superlattice series (Sb-2)(m)-Sb2Te3 (m = 0-3) by means of angle-resolved photoemission spectroscopy and time-delayed two-photon photoemission, combined with first-principles band-structure calculations. We discover that the topological nature of the surface states and their spin texture are robust, with dispersions evolving from linear (Dirac-like) to parabolic (Rashba-like) along the series, as the materials evolve from semiconductors to semimetals. Our findings provide a promising strategy for engineering the topological states with the desired flexibility needed for realizing different quantum phenomena and spintronics applications.

Engineering the topological surface states in the (Sb-2)(m)-Sb2Te3 (m=0-3) superlattice series

M Zacchigna;
2015

Abstract

We investigate the evolution of both the occupied and unoccupied electronic structure in representative compounds of the infinitely adaptive superlattice series (Sb-2)(m)-Sb2Te3 (m = 0-3) by means of angle-resolved photoemission spectroscopy and time-delayed two-photon photoemission, combined with first-principles band-structure calculations. We discover that the topological nature of the surface states and their spin texture are robust, with dispersions evolving from linear (Dirac-like) to parabolic (Rashba-like) along the series, as the materials evolve from semiconductors to semimetals. Our findings provide a promising strategy for engineering the topological states with the desired flexibility needed for realizing different quantum phenomena and spintronics applications.
2015
Istituto Officina dei Materiali - IOM -
Inglese
91
20
5
Engineering the topological surface states in the (Sb-2)(m)-Sb2Te3 (m=0-3) superlattice series
14
info:eu-repo/semantics/article
262
C Johannsen, J; Autes, G; Crepaldi, A; Moser, S; Casarin, B; Cilento, F; Zacchigna, M; Berger, H; Magrez, A; J Avila, Ph Bugnon; C Asensio, M; Parmigi...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/341949
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