Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Fabrication and properties of etched GaN nanorods
Causa Federica;
2012
Abstract
Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimFile in questo prodotto:
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