Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Fabrication and properties of etched GaN nanorods
Causa Federica;
2012
Abstract
Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimFile in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_379452-doc_128514.pdf
solo utenti autorizzati
Descrizione: Articolo pubblicato
Tipologia:
Versione Editoriale (PDF)
Dimensione
1.13 MB
Formato
Adobe PDF
|
1.13 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
