Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Fabrication and properties of etched GaN nanorods

Causa Federica;
2012

Abstract

Gallium nitride nanorod arrays have been created via dry etching in Cl-2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
2012
Istituto di fisica del plasma - IFP - Sede Milano
GaN
nanorods
nanocolumns
dry etching
nanoimprint lithography
lift-off
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/342650
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