The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p -> Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of lowerature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p<pcr region of the phase diagram. This discovery sets a new framework for theories of charge order and lowerature phases in underdoped copper oxides. © 2017 Macmillan Publishers Limited, part of Springer Nature

Mottness at finite doping and charge instabilities in cuprates

Lupi S;Cerullo G;
2017

Abstract

The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p -> Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of lowerature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p
2017
Istituto di fotonica e nanotecnologie - IFN
Istituto Officina dei Materiali - IOM -
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/343943
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