In this work, staggered top-gate n-type organic thin film transistors (OTFTs) with evaporated PDIF-CN2 semiconducting layers, spin-coated Cytop(TM) dielectric barriers and channel lengths ranging from 100 to 2 ?m were fabricated on polyethylene-naphtalate (PEN) substrates. Hexamethyldisilazane (HMDS) treatment of the PEN surface was successfully tested as an effective strategy to achieve flexible devices with improved electrical response. Following this approach, maximum field-effect mobility (?FE) values exceeding 0.4 cm2/V?s were observed in air. Moreover, the self-encapsulating features of the investigated top-gate configuration, employing the highly hydrophobic Cytop(TM) dielectric films, allowed getting considerable performances in terms of un-sensitivity to hysteresis and bias stress phenomena
Staggered top-gate PDIF-CN2 N-type thin film transistors on flexible plastic substrates
Rapisarda;Ma;Calvi;Sa;Barra;Chiarella;Cassinese;Ab;Mariucci;La
2018
Abstract
In this work, staggered top-gate n-type organic thin film transistors (OTFTs) with evaporated PDIF-CN2 semiconducting layers, spin-coated Cytop(TM) dielectric barriers and channel lengths ranging from 100 to 2 ?m were fabricated on polyethylene-naphtalate (PEN) substrates. Hexamethyldisilazane (HMDS) treatment of the PEN surface was successfully tested as an effective strategy to achieve flexible devices with improved electrical response. Following this approach, maximum field-effect mobility (?FE) values exceeding 0.4 cm2/V?s were observed in air. Moreover, the self-encapsulating features of the investigated top-gate configuration, employing the highly hydrophobic Cytop(TM) dielectric films, allowed getting considerable performances in terms of un-sensitivity to hysteresis and bias stress phenomenaI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
