Silicon has been grown on the (8×8)-reconstructed ?-Si3N4(0 0 0 1) surface at 350 °C temperature. The pure Volmer-Weber growth mode has induced the formation of nano-sized silicon clusters randomly distributed on the surface. Synchrotron radiation photoelectron spectroscopy and scanning tunneling microscopy have been employed to study the system. A fit to the photoemission spectra, complemented by topographic information, has allowed us to assign each Si2p and N1s component to the different non equivalent sites of silicon and nitrogen atoms.
A spectroscopy and microscopy study of silicon nanoclusters grown on Beta-Si3 N4 (0 0 0 1)/Si(1 1 1) interface
Sheverdyaeva P M;Trucchi D M;Ronci F;Colonna S;Moras P;Flammini R
2019
Abstract
Silicon has been grown on the (8×8)-reconstructed ?-Si3N4(0 0 0 1) surface at 350 °C temperature. The pure Volmer-Weber growth mode has induced the formation of nano-sized silicon clusters randomly distributed on the surface. Synchrotron radiation photoelectron spectroscopy and scanning tunneling microscopy have been employed to study the system. A fit to the photoemission spectra, complemented by topographic information, has allowed us to assign each Si2p and N1s component to the different non equivalent sites of silicon and nitrogen atoms.File in questo prodotto:
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