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This presentation deals with a modellization developed for describing OTFTs' instability upon bias stress effect through the analysis of hysteretic transfer characteristics

Quantitative analysis of charge-carrier trapping in organic thin-film transistors from transfer characteristics

P D'Angelo;F Biscarini
2009

Abstract

This presentation deals with a modellization developed for describing OTFTs' instability upon bias stress effect through the analysis of hysteretic transfer characteristics
2009
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
hysteresis
bias stress instability
pentacene OTFTs
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/34678
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