In JT-60SA, the control of resistive-wall-mode (RWM) instabilities will also be realized with a dedicated active control system based on 18 in-vessel sector coils. Each coil will be fed independently by a dedicated fast inverter. Due to the outstanding dynamic performance required, new insulated-gate bipolar transistor modules based on silicon carbide (SiC) have been adopted. Being capable to switch at 30 kHz, these components, together with a very fast control system, allow reaching the required high dynamic performance with the simple and compact H-bridge topology. The RWM-PS will be the first power supply system for fast control of plasma instabilities in fusion experiments adopting SiC semiconductors. This paper gives an overview of the final design of the RWM-PS, with particular emphasis on its special features and the solutions implemented to satisfy the critical requirements. The issues related with the high switching frequency and the peculiar nature of the load will be treated in detail.

Design and Manufacturing of the SiC-Based Power Supply System for Resistive-Wall-Mode Control in JT-60SA

Gaio E;
2018

Abstract

In JT-60SA, the control of resistive-wall-mode (RWM) instabilities will also be realized with a dedicated active control system based on 18 in-vessel sector coils. Each coil will be fed independently by a dedicated fast inverter. Due to the outstanding dynamic performance required, new insulated-gate bipolar transistor modules based on silicon carbide (SiC) have been adopted. Being capable to switch at 30 kHz, these components, together with a very fast control system, allow reaching the required high dynamic performance with the simple and compact H-bridge topology. The RWM-PS will be the first power supply system for fast control of plasma instabilities in fusion experiments adopting SiC semiconductors. This paper gives an overview of the final design of the RWM-PS, with particular emphasis on its special features and the solutions implemented to satisfy the critical requirements. The issues related with the high switching frequency and the peculiar nature of the load will be treated in detail.
2018
Istituto gas ionizzati - IGI - Sede Padova
Insulated gate bipolar transistors
plasma stability
power supplies
pulsewidth modulated power converters
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/347319
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