SiO2-P2O5-HfO2-Al2O3-Na2O planar waveguide was fabricated by rf-sputtering technique. The optical, structural and morphological parameters were measured by various techniques such as m-line spectroscopy, Energy Dispersive X-ray Spectroscopy and Atomic Force Microscopy. The waveguide exhibits a single propagation mode at 1319 and 1542 nm with an attenuation coefficient of 0.2 dB/cm in the infrared. The emission of 4I13/2 -> 4I15/2 transition of Er3+ ion, with a 28.5 nm bandwidth was observed upon TE0 mode excitation at 514.5 nm. The optical and spectroscopic features of the Er3+-activated parent P2O5-SiO2-Al2O3-Na2O glass were also investigated.
RF-sputtering derived phosphosilicate planar waveguides activated by Er3+ions
Chiasera A;Varas S;Zur LZ;Ferrari M
2016
Abstract
SiO2-P2O5-HfO2-Al2O3-Na2O planar waveguide was fabricated by rf-sputtering technique. The optical, structural and morphological parameters were measured by various techniques such as m-line spectroscopy, Energy Dispersive X-ray Spectroscopy and Atomic Force Microscopy. The waveguide exhibits a single propagation mode at 1319 and 1542 nm with an attenuation coefficient of 0.2 dB/cm in the infrared. The emission of 4I13/2 -> 4I15/2 transition of Er3+ ion, with a 28.5 nm bandwidth was observed upon TE0 mode excitation at 514.5 nm. The optical and spectroscopic features of the Er3+-activated parent P2O5-SiO2-Al2O3-Na2O glass were also investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
