The growth of gold on a silicon nitride thin film grown on a Si(1 1 1) surface was investigated by means of core-level and valence band photoelectron spectroscopy. After in situ thermal passivation by NH3 of the silicon substrate, gold was deposited at room temperature. We followed the Si 2p and Au 4f core-levels as well as valence band spectra as a function of the gold coverage. The metal adsorbate follows the VolmerWeber growth mode. The formation of a nonreactive and abrupt interface between the metal and insulator layer is clearly demonstrated.
Crystalline silicon nitride passivating the Si(111) surface: A study of the Au growth mode
Flammini R;Iacobucci S;
2005
Abstract
The growth of gold on a silicon nitride thin film grown on a Si(1 1 1) surface was investigated by means of core-level and valence band photoelectron spectroscopy. After in situ thermal passivation by NH3 of the silicon substrate, gold was deposited at room temperature. We followed the Si 2p and Au 4f core-levels as well as valence band spectra as a function of the gold coverage. The metal adsorbate follows the VolmerWeber growth mode. The formation of a nonreactive and abrupt interface between the metal and insulator layer is clearly demonstrated.File in questo prodotto:
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