In this communication we report our attempts to extend this method to the preparation of GaAsxSb l_x via a thermally induced reaction of electrodeposited Ga with As + Sb alloys. The latter were obtained by a codeposition procedure developed by our group [9]. Since homogenous alloys can be obtained with virtually any As:Sb ratio, the method appears suitable for preparing ternary compounds of any desired stoichiometry

Electrochemical Approaches to GaAs1-xSbx Thin Films

Cattarin S;Musiani M;
1995

Abstract

In this communication we report our attempts to extend this method to the preparation of GaAsxSb l_x via a thermally induced reaction of electrodeposited Ga with As + Sb alloys. The latter were obtained by a codeposition procedure developed by our group [9]. Since homogenous alloys can be obtained with virtually any As:Sb ratio, the method appears suitable for preparing ternary compounds of any desired stoichiometry
1995
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Inglese
1995
2
265
268
4
http://www.sciencedirect.com/science/article/pii/002207289403761Q
Sì, ma tipo non specificato
4
info:eu-repo/semantics/article
262
Andreoli, P; Cattarin, S; Musiani, M; Paolucci, F
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/3486
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