Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation in the peak intensity as a function of the applied gate voltage. In this Rapid Communication we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between symmetric (Eg) and antisymmetric (Eu) phonon modes as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the band gap.

Phonon switching and combined Fano-Rice effect in optical spectra of bilayer graphene

E. Cappelluti;L. Benfatto;
2010

Abstract

Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation in the peak intensity as a function of the applied gate voltage. In this Rapid Communication we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between symmetric (Eg) and antisymmetric (Eu) phonon modes as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the band gap.
2010
Istituto dei Sistemi Complessi - ISC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/34906
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