Recently, bandgap opening at the Dirac point in graphene, formed on SiC(0001) surfaces, has been reported in different experiments, by deposition of positively charged alkali ions. This is clearly of great relevance for the countless practical applications of graphene in nano-electronic devices. By first principles calculations, based on the Density Functional Theory, the electronic band structure and the energetic properties are obtained for Naþ, Kþ, and Csþ ions interacting with graphene on SiC. We show that simple adsorption of alkali ions on intact graphene cannot give rise to a significant energy gap. An appreciable bandgap opening, similar to that observed in actual experiments, occurs instead due to the formation of Stone-Wales defects and substitutional defects (where positively charged alkali ions replace carbon atoms) that lead to a significant breaking of the charge symmetry among the carbon atoms of pristine graphene

Bandgap opening in graphene using alkali ions by first principles

2018

Abstract

Recently, bandgap opening at the Dirac point in graphene, formed on SiC(0001) surfaces, has been reported in different experiments, by deposition of positively charged alkali ions. This is clearly of great relevance for the countless practical applications of graphene in nano-electronic devices. By first principles calculations, based on the Density Functional Theory, the electronic band structure and the energetic properties are obtained for Naþ, Kþ, and Csþ ions interacting with graphene on SiC. We show that simple adsorption of alkali ions on intact graphene cannot give rise to a significant energy gap. An appreciable bandgap opening, similar to that observed in actual experiments, occurs instead due to the formation of Stone-Wales defects and substitutional defects (where positively charged alkali ions replace carbon atoms) that lead to a significant breaking of the charge symmetry among the carbon atoms of pristine graphene
2018
Istituto Officina dei Materiali - IOM -
Graphene Band gap
First-principle calculations
Electronic devices
Crystallographic defects
Electronic bandstructure
Density functional theory
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/349158
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