On our way to develop a multiphysical model of VCSELs including carrier transport, electromagnetic propagation, and heat conduction, we discuss some critical aspects of the adopted multiscale strategy. In particular, we address the inclusion of non-classical corrections within a classical carrier transport framework, and the possibilities offered by rigorous approaches such as the nonequilibrium Green's function (NEGF) towards the determination of some critical parameters, bridging from the nanometer to the macroscopic scale. This seems a promising line of action towards the simulation and optmization of 3D highly nanostructured devices such as VCSELs.

Bridging scales in multiphysical VCSEL modeling

Alberto Tibaldi;Francesco Bertazzi;Michele Goano;Pierluigi Debernardi
2018

Abstract

On our way to develop a multiphysical model of VCSELs including carrier transport, electromagnetic propagation, and heat conduction, we discuss some critical aspects of the adopted multiscale strategy. In particular, we address the inclusion of non-classical corrections within a classical carrier transport framework, and the possibilities offered by rigorous approaches such as the nonequilibrium Green's function (NEGF) towards the determination of some critical parameters, bridging from the nanometer to the macroscopic scale. This seems a promising line of action towards the simulation and optmization of 3D highly nanostructured devices such as VCSELs.
2018
Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni - IEIIT
VCSELs
carrier transport
optoelectronic device simulation
NEGF
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/349783
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