We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.
Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods
Emilia Benvenuti
;Denis Gentili
;Fabio Chiarella;Alberto Portone;Mario Barra;Marco Cecchini;Massimo Zambianchi;Antonio Cassinese;Dario Pisignano;Luana Persano;Massimiliano Cavallini;Manuela Melucci;Michele Muccini;Stefano Toffanin
2018
Abstract
We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.File | Dimensione | Formato | |
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Descrizione: Tuning polymorphism in 2,3-thienoimide capped oligothiophenes based field-effect transistors by implementing vacuum and solution deposition methods
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