A detailed characterization under 90Sr beta-particles and 4.5 MeV protons micro-beam of a single-crystal CVD diamond-based three-dimensional detector with surface and buried graphite electrodes is presented. Pillar contacts, 300 um long and 30 um diameter, were fabricated by using a femtosecond laser operating at 1030 nm wavelength and 400 fs pulse duration. Charge collected under 90Sr beta-particles was measured in front and back irradiation conditions, pointing out that the pillars contribute to the charge collection. Charge collection efficiency (CCE) was measured to be up to 94% under proton beam irradiation. Results of a comprehensive study, including crossed-polarizers imaging, numerical simulation of the electric field distribution, and proton mapping, show that CCE is not affected from the stress induced by the pillar fabrication, and that the electric field strength is high enough to partially compensate for carrier recombination in the defected regions surrounding the pillars.

Investigation with beta-particles and protons of buried graphite pillars in single-crystal CVD diamond

M Girolami;DM Trucchi;A Bellucci;
2018

Abstract

A detailed characterization under 90Sr beta-particles and 4.5 MeV protons micro-beam of a single-crystal CVD diamond-based three-dimensional detector with surface and buried graphite electrodes is presented. Pillar contacts, 300 um long and 30 um diameter, were fabricated by using a femtosecond laser operating at 1030 nm wavelength and 400 fs pulse duration. Charge collected under 90Sr beta-particles was measured in front and back irradiation conditions, pointing out that the pillars contribute to the charge collection. Charge collection efficiency (CCE) was measured to be up to 94% under proton beam irradiation. Results of a comprehensive study, including crossed-polarizers imaging, numerical simulation of the electric field distribution, and proton mapping, show that CCE is not affected from the stress induced by the pillar fabrication, and that the electric field strength is high enough to partially compensate for carrier recombination in the defected regions surrounding the pillars.
2018
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Graphite pillars; 3D detectors; Single-crystal CVD diamond; ?-Particles; Protons
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/351124
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