Ab initio nonequilibrium Keldysh formalism based on an N-order renormalization technique is used to compute I (V) ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precise experimental measurements under ultrahigh vacuum and low- temperature conditions. At T = 0 K, the ballistic current follows the law (V - V-SB)(2.1), V(SB )being the Schottky barrier. At T > 0 K, temperature effects become significant near the onset and must be taken into account to identify an accurate value for V-SB from a best-fit procedure. We find two values for V-SB, 0.67 and 0.75 eV, which we associate with two different atomic registries at the interface.

Accurate ab initio determination of ballistic electron emission spectroscopy: Application to Au/Ge

Gerbi A;Buzio R;Manca N;
2018

Abstract

Ab initio nonequilibrium Keldysh formalism based on an N-order renormalization technique is used to compute I (V) ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precise experimental measurements under ultrahigh vacuum and low- temperature conditions. At T = 0 K, the ballistic current follows the law (V - V-SB)(2.1), V(SB )being the Schottky barrier. At T > 0 K, temperature effects become significant near the onset and must be taken into account to identify an accurate value for V-SB from a best-fit procedure. We find two values for V-SB, 0.67 and 0.75 eV, which we associate with two different atomic registries at the interface.
2018
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
ballistics | Hot electrons | ballistic electron
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/351987
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