Integration of graphene into electronic circuits through its joining with conventional metal electrodes (i.e., gold) appears to be one of the main technological challenges nowadays. To gain insight into this junction, we have studied the physicochemical interactions between SiC-supported graphene and a drop of molten gold. Using appropriate high-temperature experimental conditions, we perform wetting experiments and determine contact angles for gold drops supported on graphene epitaxially grown on 4H-SiC. The properties of the metal/graphene interface are analyzed using a wide variety of characterization techniques, along with computational simulations based on density functional theory. In contrast with the established literature, our outcomes clearly show that graphene is translucent in the gold/graphene/SiC interface, and therefore its integration into electronic circuits primarily depends on the right choice of the support to produce favorable wetting interactions with liquid gold.

Graphene Translucency and Interfacial Interactions in the Gold/Graphene/SiC System

Giuranno D;Ricci E;
2018

Abstract

Integration of graphene into electronic circuits through its joining with conventional metal electrodes (i.e., gold) appears to be one of the main technological challenges nowadays. To gain insight into this junction, we have studied the physicochemical interactions between SiC-supported graphene and a drop of molten gold. Using appropriate high-temperature experimental conditions, we perform wetting experiments and determine contact angles for gold drops supported on graphene epitaxially grown on 4H-SiC. The properties of the metal/graphene interface are analyzed using a wide variety of characterization techniques, along with computational simulations based on density functional theory. In contrast with the established literature, our outcomes clearly show that graphene is translucent in the gold/graphene/SiC interface, and therefore its integration into electronic circuits primarily depends on the right choice of the support to produce favorable wetting interactions with liquid gold.
2018
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
ATOMIC-STRUCTURE
BUFFER LAYER
BASIS-SET
SIC(0001)
AU
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/352837
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