The anisotropic materials as the acoustic wave propagating medium introduce the dependence of the phase velocity on the wave propagation direction, as opposed to the isotropic counterparts; in addition, the profile of the particle displacement components can be quite different, depending on the crystal type and propagation direction. The propagation of surface and bulk acoustic waves (SAWs and BAWs) along the (001), (111) and (110) planes of cubic SiC crystals have been studied. For specific propagation directions in these planes, slight variations in the velocity of the elastic surface waves are found. It was observed that Rayleigh-type, generalized and pseudo-surface waves can propagate at specific directions, thus confirming how the anisotropic behavior of the bare SiC substrate modifies the existence and the field profile of the SAW that propagates at its free surface. Finally, the SAW propagation along AlN/SiC-based multilayered structures is studied for the three SiC planes, different AlN piezoelectric layer thicknesses and electrical boundary conditions.

Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN

Caliendo;Cinzia
2016

Abstract

The anisotropic materials as the acoustic wave propagating medium introduce the dependence of the phase velocity on the wave propagation direction, as opposed to the isotropic counterparts; in addition, the profile of the particle displacement components can be quite different, depending on the crystal type and propagation direction. The propagation of surface and bulk acoustic waves (SAWs and BAWs) along the (001), (111) and (110) planes of cubic SiC crystals have been studied. For specific propagation directions in these planes, slight variations in the velocity of the elastic surface waves are found. It was observed that Rayleigh-type, generalized and pseudo-surface waves can propagate at specific directions, thus confirming how the anisotropic behavior of the bare SiC substrate modifies the existence and the field profile of the SAW that propagates at its free surface. Finally, the SAW propagation along AlN/SiC-based multilayered structures is studied for the three SiC planes, different AlN piezoelectric layer thicknesses and electrical boundary conditions.
2016
Istituto di fotonica e nanotecnologie - IFN
3C-SiC
AlN
anisotropy
SAW
BAW
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/353209
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