The properties of InGaAsN V-groove quantum wires (QWRs) - both untreated and irradiated with atomic hydrogen-are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess - and to precisely control-the effects of N incorporation in the QWRs.

Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires

Pettinari G;Notargiacomo A;
2013

Abstract

The properties of InGaAsN V-groove quantum wires (QWRs) - both untreated and irradiated with atomic hydrogen-are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess - and to precisely control-the effects of N incorporation in the QWRs.
2013
Inglese
1566
5
6
2
Dilute nitrides
V-groove quantum wires
Hydrogen in semiconductors
Optical properties
16
info:eu-repo/semantics/article
262
Felici, M; Pettinari, G; Polimeni, A; Carron, R; Lavenuta, G; Tartaglini, E; De Luca, M; Notargiacomo, A; Fekete, D; Gallo, P; Dwir, B; Rudra, A; Chri...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/353825
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