For thin and narrow depositions the measured thickness and width are significantly different from the nominal values. From leakage tests we found that in order to have electrically insulated parallel resistors at room temperature, it is mandatory that the Pt-halo, which results from the deposition procedure, has a thickness well below 6 nm. (C) 2008 Elsevier Ltd. All rights reserved.

We present morphological and electrical characterizations of thin and narrow resistors obtained by focused ion beam assisted deposition of Pt based material.

Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures

Notargiacomo A;
2009

Abstract

We present morphological and electrical characterizations of thin and narrow resistors obtained by focused ion beam assisted deposition of Pt based material.
2009
For thin and narrow depositions the measured thickness and width are significantly different from the nominal values. From leakage tests we found that in order to have electrically insulated parallel resistors at room temperature, it is mandatory that the Pt-halo, which results from the deposition procedure, has a thickness well below 6 nm. (C) 2008 Elsevier Ltd. All rights reserved.
Focused ion beam
Ion beam induced deposition
Nanoelectrodes
One-dimensional structures
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/353833
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