Thin films of Ba(Ti1-xSnx)O-3 with x = 0.13 have been deposited by rf-magnetron sputtering and their growth morphology and structure vs annealing temperature, in oxygen atmosphere, have been investigated The films deposited on silicon-platinum substrates, at room temperature, in Ar atmosphere were amorphous The as-obtained films had a mean surface roughness (RMS) around 6.529 nm and a grain size of about 150 nm By annealing the film up to 1150 degrees C in oxygen, the grains size increases up to 1-1.5 mu m in diameter Films containing BaTi0.87Sn0.13 as crystalline phase with the cubic structure of BaTiO3 and, bundle-like morphology were obtained by heating the film at 1250 degrees C for 3h in oxygen The as-obtained film showed the preferential (110) and (100) orientations
Evolution of the surface morphology with temperature, in oxidant atmosphere, of Ba (Ti1-xSnx)O-3 (x=0.13) thin films
Galassi C
2009
Abstract
Thin films of Ba(Ti1-xSnx)O-3 with x = 0.13 have been deposited by rf-magnetron sputtering and their growth morphology and structure vs annealing temperature, in oxygen atmosphere, have been investigated The films deposited on silicon-platinum substrates, at room temperature, in Ar atmosphere were amorphous The as-obtained films had a mean surface roughness (RMS) around 6.529 nm and a grain size of about 150 nm By annealing the film up to 1150 degrees C in oxygen, the grains size increases up to 1-1.5 mu m in diameter Films containing BaTi0.87Sn0.13 as crystalline phase with the cubic structure of BaTiO3 and, bundle-like morphology were obtained by heating the film at 1250 degrees C for 3h in oxygen The as-obtained film showed the preferential (110) and (100) orientationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


