We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature. (C) 2016 AIP Publishing LLC.

Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

Attolini G
2016

Abstract

We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature. (C) 2016 AIP Publishing LLC.
2016
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
photoluminescence
ordered semiconductors
III-V
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/355213
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact