We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.

Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field

2016

Abstract

We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.
2016
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/355881
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 18
  • ???jsp.display-item.citation.isi??? ND
social impact