In this letter, we report on the optical properties of multistacked Ge quantum dots grown on Si(001). We demonstrate that the two emission bands observed in the photoluminescence spectra are related to the presence of strained and relaxed islands. Within both types of islands, the experimental findings support the hypothesis of the presence of quantum confining regions whose dimensions are governed by the strain relaxation process. (C) 2002 American Institute of Physics.
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001)
Notargiacomo A;
2002
Abstract
In this letter, we report on the optical properties of multistacked Ge quantum dots grown on Si(001). We demonstrate that the two emission bands observed in the photoluminescence spectra are related to the presence of strained and relaxed islands. Within both types of islands, the experimental findings support the hypothesis of the presence of quantum confining regions whose dimensions are governed by the strain relaxation process. (C) 2002 American Institute of Physics.File in questo prodotto:
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